ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics (PDF)

Fábio Fedrizzi Vidor received in 2011 the B.Sc. degree in Electrical Engineering and in 2012 the M.Sc. degree in Microelectronics, both from the Federal University of Rio Grande do Sul (UFRGS), Brazil. In 2017, he received the Dr.-Ing. degree in Electrical Engineering from the Paderborn University, Germany. He is currently a postdoctoral researcher at the Federal University of Rio Grande do Sul (UFRGS), Brazil. In 2009, he participated in the micro and nanoelectronic cooperation program at the State University of New York at Buffalo (SUNY), USA. In 2010 and 2011, he worked in the Prototyping and Testing Laboratory at UFRGS (LAPROT-UFRGS), developing transistor characterization methods and working at the performance enhancement of ZnO transistors in cooperation with the Paderborn University, Germany. In 2012, as a research assistant in the Post-Graduate Program on Microelectronic (PGMICRO-UFRGS), he worked on ZnO TFT reliability. From 2013 to 2017, he worked as a research assistant at the Paderborn University in the field of complementary TFTs with (in)organic semiconductors. His current research interests include fabrication, characterization, modeling and reliability of ZnO based and complementary TFTs and flexible electronics..



Gilson I. Wirth received the B.S.E.E and M.Sc. degrees from the Universidade Federal do Rio Grande do Sul, Brazil, in 1990 and 1994, respectively. In 1999 he received the Dr.-Ing. degree in Electrical Engineering from the University of Dortmund, Dortmund, Germany. He is currently a professor at the Electrical Engineering Department at the Universidade Federal do Rio Grande do Sul - UFRGS (since January 2007) , where he was the head of graduate and undergraduate courses. From July 2002 to December 2006 he was professor and head of the Computer Engineering Department, Universidade Estadual do Rio Grande do Sul (UERGS). His research work is focused on reliability and yield of MOS devices and circuits, including