Technology of Gallium Nitride Crystal Growth
(Sprache: Englisch)
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Jetzt vorbestellen
versandkostenfrei
Buch (Gebunden)
Fr. 236.00
inkl. MwSt.
- Kreditkarte, Paypal, Rechnungskauf
- 30 Tage Widerrufsrecht
Produktdetails
Produktinformationen zu „Technology of Gallium Nitride Crystal Growth “
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Klappentext zu „Technology of Gallium Nitride Crystal Growth “
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
Inhaltsverzeichnis zu „Technology of Gallium Nitride Crystal Growth “
Market for Bulk GaN Crystals.- Development of the Bulk GaN Substrate Market.- Vapor Phase Growth Technology.- Hydride Vapor Phase Epitaxy of GaN.- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds.- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology.- Nonpolar and Semipolar GaN Growth by HVPE.- High Growth Rate MOVPE.- Solution Growth Technology.- Ammonothermal Growth of GaN Under Ammono-Basic Conditions.- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method.- Acidic Ammonothermal Growth Technology for GaN.- Flux Growth Technology.- High Pressure Solution Growth of Gallium Nitride.- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal.- Low Pressure Solution Growth of Gallium Nitride.- Characterization of GaN Crystals.- Optical Properties of GaN Substrates.- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.
Autoren-Porträt
Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. His field of competence covers the crystal growth of films and bulk material from the liquid and vapor phase and material aspects of the wide band gap semiconductors of group-III nitrides and ZnO. He has authored 130 publications in books, journals and conferences and holds 6 patents.
Bibliographische Angaben
- 2010, XXII, 326 Seiten, Masse: 16 x 24,1 cm, Gebunden, Englisch
- Herausgegeben: Dirk Ehrentraut, Elke Meissner, Michal Bockowski
- Verlag: Springer, Berlin
- ISBN-10: 3642048285
- ISBN-13: 9783642048289
- Erscheinungsdatum: 24.06.2010
Sprache:
Englisch
Kommentar zu "Technology of Gallium Nitride Crystal Growth"
0 Gebrauchte Artikel zu „Technology of Gallium Nitride Crystal Growth“
| Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
|---|
Schreiben Sie einen Kommentar zu "Technology of Gallium Nitride Crystal Growth".
Kommentar verfassen