Synthesis and Characterization of Piezotronic Materials for Application in Strain/Stress Sensing
(Sprache: Englisch)
This book explores the new materials and the resultant new field of piezotronics. The growth and alignment of the zinc oxide nanostructures are discussed in detail because of its wide adoption in this field and its significance in optics, health, and...
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Klappentext zu „Synthesis and Characterization of Piezotronic Materials for Application in Strain/Stress Sensing “
This book explores the new materials and the resultant new field of piezotronics. The growth and alignment of the zinc oxide nanostructures are discussed in detail because of its wide adoption in this field and its significance in optics, health, and sensing applications. The characterization of the piezotronic effect and how to distinguish it from other similar but, fundamentally different effects, like piezoresistive effect is also considered. The huge potential in the wearable and flexible devices, as well as organic materials, is further examined. The stain/stress sensing is introduced as an example of an application with piezotronic materials.Inhaltsverzeichnis zu „Synthesis and Characterization of Piezotronic Materials for Application in Strain/Stress Sensing “
Introduction to the piezotronic effect and sensing applications.- Growth of uniform nanowires with orientation control.- Alignment and transfer of nanowires in a spinning Langmuir film.- Piezotronic effect in a zinc oxide nanowire.- Ultra-sensitive strain/stress sensing.- Closure.-Autoren-Porträt von Ren Zhu, Rusen Yang
Ren Zhu is a Ph.D Candidate in Mechanical Engineering at the University of Minnesota. Rusen Yang is Assistant Professor of Mechanical Engineering at the University of Minnesota.
Bibliographische Angaben
- Autoren: Ren Zhu , Rusen Yang
- 2018, 1st ed. 2018, VIII, 70 Seiten, 41 farbige Abbildungen, Masse: 15,9 x 24,1 cm, Gebunden, Englisch
- Verlag: Springer, Berlin
- ISBN-10: 3319700367
- ISBN-13: 9783319700366
- Erscheinungsdatum: 01.03.2018
Sprache:
Englisch
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