Nanoscale Phenomena in Ferroelectric Thin Films

List of Contributors. Preface. Acknowledgment. Part I: Electrical Characterization in Nanoscale Ferroelectric Capacitor. I. Testing and characterization of ferroelectric thin film capacitors; In Kyeong Yoo. 1. Test Circuits. 2. Hysteric Property. 3. Capacitance and Current. 4.Stored Energy. 5. Ageing. 6. Fatigue. 7. Imprint. 8. Leakage Current. 9. Electrical Degradation. 10. Breakdown. 11. Pyroelectric Effect. 12. Additional tests for commercial memory cells. References. II. Size effects in ferroelectric film capacitors: role of the film thickness and capacitor size; I. Stolichnov. 1. Introduction. 2. Size effects: role of the ferroelectric film thickness, impact of the passive layer and local charge injection. 3. Size effects: role of the capacitor size and impact of nonhomogeneous stress. 4. Conclusions and outlook. Acknowledgements. References. III. Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy; A. Gruverman. 1. Introduction. 2. Experimental Approach. 3. Variations in Ferroelectric Properties at the nanoscale. 4. PFM studies of retention behavior. 5. Nanoscale Leakage Current Mapping. 6. Conclusion. Acknowledgment. References. IV. Nanoscale dynamics in ferroelectric thin films; V. Nagarajan, R. Ramesh. 1. Introduction. 2. Thin Film Materials and Characterization. 3. Polarization Relaxation at the Nanoscale. 4. Nanoscale Piezoelectric and Ferroelectric Behavior. 5. Conclusions. Acknowledgements. References. V. Polarization switching and fatigue of ferroelectric thin films studied by PFM; Seungbum Hong. 1. Introduction. 2. Polarization switching. 3. Fatigue: suppression of switchable polarization. 4. Summary and Conclusion. Acknowledgments. References. Part II: Nano Domain Manipulation and Visualization in Ferroelectric Materials. VI. Domain switching and self-polarization in perovskite thin films; A. Roelofs, K. Szot, R. Waser. 1. Introduction. 2. PTO polycrystalline thin films on platinized silicon