The IGBT Device (ePub)
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The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential information needed by applications engineers to design new products using the device in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The IGBT device has proven to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasoline powered motor vehicles and energy-saving compact fluorescent light bulbs.
The book presents recent applications in plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage, but it is also used in all renewable energy generation systems, including solar and wind power. This book is the first available on the applications of the IGBT. It will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical and design engineers, as well as an important publication for semiconductor specialists.
- Presents essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors
- Teaches the methodology for the design of IGBT chips, including edge terminations, cell topologies, gate layouts, and integrated current sensors
- Covers applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion
- Written by the inventor of the device, this is the first book to highlight the key role of the IGBT in enabling electric vehicles and renewable energy systems with global impacts on climate change
From 1974 to 1988, Dr. Baliga performed research and directed a group of 40 scientists at the General Electric Research and Development Center in Schenectady, NY, in the area of Power Semiconductor Devices and High Voltage Integrated Circuits. During this time, he pioneered the concept of combining MOS and Bipolar physics to create a new family of discrete devices. He is the inventor of the IGBT which is now in production by many International Semiconductor companies. For his work, Scientific American Magazine named him one of the 'Eight heroes of the semiconductor revolution' in their 1997 special issue commemorating the Solid-State Century. Dr. Baliga is also the originator of the concept of merging Schottky and p-n junction physics to create a new family of JBS power rectifiers that are commercially available from various companies.
In August 1988, Dr. Baliga joined the faculty of the Department of Electrical and Computer Engineering at North Carolina State University, Raleigh, North Carolina, as a Full Professor. At NCSU, in 1991 he established an international center called the Power Semiconductor Research Center (PSRC) for research in the area of power semiconductor devices and high voltage integrated circuits, and has served as its Founding Director. In 1997, in recognition of his contributions to NCSU, he was given the highest
In 2010, Dr. Baliga was inducted into the Engineering Design Magazine's "Engineering Hall of Fame¿ for his invention, development, and commercialization of the Insulated Gate Bipolar Transistor (IGBT), joining well known luminaries (e.g. Edison, Tesla, and Marconi) in the electrical engineering field. The award announcement states: "While working at General Electric in the late 1970s, Baliga conceived the idea of a functional integration of MOS technology and bipolar physics that directly led to the IGBT's development... it remains undeniable that Baliga's vision and leadership played a critical role in moving the IGBT from a paper-based concept to a viable product with many practical applications.¿
Professor Baliga has received numerous awards in recognition for his contributions to semiconductor devices. These include two IR 100 awards (1983, 1984), the Dushman and Coolidge Awards at GE (1983), and being selected among the 100 Brightest Young Scientists in America by Science Digest Magazine (1984), and, on October 21, 2011, President Obama personally presented Dr. B. Jayant Baliga with the National Medal of Technology and Innovation, the highest form of recognition given by the United States Government to an Engineer, in a ceremony at the White House. Dr. Baliga's award citation reads: For development and commercialization of the Insulated Gate Bipolar Transistor and other power semiconductor devices that are extensively used in transportation, lighting, medicine, defense, and renewable energy generation systems.
- Autor: B. Jayant Baliga
- 2022, 2. Auflage, 800 Seiten, Englisch
- Verlag: Elsevier Science & Techn.
- ISBN-10: 0323917143
- ISBN-13: 9780323917148
- Erscheinungsdatum: 25.11.2022
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- Dateiformat: ePub
- Grösse: 126 MB
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