Porous Silicon Carbide and Gallium Nitride (PDF)

Preface. 1. Porous SiC Preparation, Characterization and Morphology 1.1 Introduction 1.2 Triangular Porous Morphology in n-type 4H-SiC. 1.3 Nano-columnar Pore Formation in 6H SiC. 1.4 Summary. Acknowledgements. References. 2. Processing Porous SiC: Diffusion, Oxidation, Contact Formation. 2.1 Introduction. 2.2 Formation of Porous Layer. 2.3 Diffusion in Porous SiC. 2.4 Oxidation. 2.5 Contacts to Porous SiC. Acknowledgments. References. 3. Growth of SiC on Porous SiC Buffer Layers. 3.1 Introduction. 3.2 SiC CVD Growth. 3.3 Growth of 3C-SiC on porous Si via Cold-Wall Epitaxy. 3.4 Growth of 3C-SiC on Porous 3C-SiC. 3.5 Growth of 4H-SiC on Porous 4H-SiC. 3.6 Conclusion. Acknowledgements. References. 4. Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching. 4.1 Introduction. 4.2 Creation of Porous GaN by Electroless Etching. 4.3 Morphology Characterization. 4.4 Luminescence of Porous GaN. 4.5 Raman Spectroscopy of Porous GaN. 4.6 Summary and Conclusions. Acknowledgments. References. 5. Growth of GaN on Porous SiC by Molecular Beam Epitaxy. 5.1 Introduction. 5.2 Morphology and Preparation of Porous SiC Substrates. 5.3 MBE Growth of GaN on Porous SiC Substrates. 5.4 Summary. Acknowledgments. References. 6. GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC. 6.1 Introduction. 6.2 Epitaxy of GaN on Porous SiNx Network. 6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN. 6.4 Growth of GaN on Porous SiC. Acknowledgements. References. 7. HVPE Growth of GaN on Porous SiC Substrates. 7.1 Introduction. 7.2 PSC Substrate Fabrication and Properties. 7.3 Epitaxial Growth of GaN Films on PSC. Summary. References. 8. Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers. 8.1 Introduction. 8.2 Extended Defects In Epitaxially Grown GaN Thin Layers. 8.3 Dislocation Mechanisms in Conventional Lateral Epitaxy Overgrowth of GaN. 8.4 Growth of GaN on Porous SiC Substrates. 8.5 Growth of GaN on Porous SiN and TiN

Randall M. Feenstra is professor in the Department of Physics at Carnegie Mellon University Pittsburgh (USA). He gained his PhD in applied physics at the California Institute of Technology (USA). His research interests include atomic structure, electronic spectroscopy of semiconductor materials and heterostructures, growth of semiconductor thin films by molecular beam epitaxy, and scanning probe microscopy. He has received awards from the Alexander von Humboldt Foundation, the Peter Mark Memorial Award of the American Vacuum Society and the IBM Outstanding Innovation Award. He has also been the co-organizer of the symposium on GaN and Related Alloys at the MRS Fall Meeting, has been part of the organizing committee for the Electronic Materials Conference, has been a member of the Organizing Committee and Conference Chair for the Conference on the Physics and Chemistry of Semiconductor Interfaces.

Dr. Colin E. C. Wood has a PhD in physical chemistry from Nottingham University (UK). He has substantial industrial and academic experience including as senior physicist at the Philips Research Laboratory in Salford (UK), Senior Research Associate at Cornell University (USA), Assistant Director at GEC Hirst Research Centre Wembley (UK), COO at Northeast Semiconductor Inc., Ithaca (USA) and Research Professor at University of Maryland (USA). He is a Founder Member of the Cornell Sub-Micron Center (NRRFS now NNF) and a Founder Member of the UK Low-Dimensional Solids Programme. His awards include the Patterson Medal from the Institute of Physics (UK).

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