Nonradiative Recombination in Semiconductors (PDF)
(Sprache: Englisch)
In recent years, great progress has been made in the understanding
of recombination processes controlling the number of excess
free carriers in semiconductors under nonequilibrium conditions.
As a result, it is now possible to give a...
of recombination processes controlling the number of excess
free carriers in semiconductors under nonequilibrium conditions.
As a result, it is now possible to give a...
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In recent years, great progress has been made in the understanding
of recombination processes controlling the number of excess
free carriers in semiconductors under nonequilibrium conditions.
As a result, it is now possible to give a comprehensive
theoretical description of these processes. The authors have
selected a number of experimental results which elucidate the
underlying physical problems and enable a test of theoretical
models.
of recombination processes controlling the number of excess
free carriers in semiconductors under nonequilibrium conditions.
As a result, it is now possible to give a comprehensive
theoretical description of these processes. The authors have
selected a number of experimental results which elucidate the
underlying physical problems and enable a test of theoretical
models.
The following topics are dealt with: phenomenological theory of
recombination, theoretical models of shallow and deep localized
states, cascade model of carrier capture by impurity centers,
capture restricted by diffusion, multiphonon processes, Auger
processes, effect of electric field on capture and thermal
emission of carriers.
Bibliographische Angaben
- Autoren: V. N. Abakumov , V. I. Perel , I. N. Yassievich
- 1991, 336 Seiten, Englisch
- Verlag: Elsevier Science & Techn.
- ISBN-10: 0444600825
- ISBN-13: 9780444600820
- Erscheinungsdatum: 26.07.1991
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