Advances in Semiconductor Nanostructures (ePub)
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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III-V, IV, and II-VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.
The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.
- Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures
- Covers recent developments in the field from all over the world
- Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Professor Anatoliy V. Dvurechenskii is Deputy Director for Science of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. His main research interests are in the field of atomic and electronic structure of point defects induced by fast electrons and ion beam irradiation; ion-beam assisted phase transition, crystal nucleation and growth; laser annealing, melting, solidification; electronic and optical phenomena in disordered system and low dimensional structures. His current research direction is quantum dot heterostructures: nanocrystal nucleation and growth with molecular beam epitaxy, pulsed ion beam action, pulsed laser annealing, electron transport and optical and spin phenomena in quantum dot heterostructures, nanoelectronics and
Professor Alexander L. Aseev is Chair of the Siberian Branch of the Russian Academy of Science, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics of micro-, nano- and optoelectronics, including the study of the atomic structure and electronic properties of semiconductor surfaces and interfaces. He has obtained new results about the metastable point defects configuration role at reaction with surfaces, dislocations, and defects. He has found reversible transitions of the system regularly spaced monatomic steps during sublimation and growth superstructural domains. He has published over 200 papers anb five monographs and he has nine patents. He has received several scientific awards including the RAS Academician and the Russian Federation Government Prize in Education in the field of optoelectronics.
- 2016, 552 Seiten, Englisch
- Herausgegeben: Alexander V. Latyshev, Anatoliy V. Dvurechenskii, Alexander L. Aseev
- Verlag: Elsevier Science & Techn.
- ISBN-10: 0128105135
- ISBN-13: 9780128105139
- Erscheinungsdatum: 10.11.2016
Abhängig von Bildschirmgrösse und eingestellter Schriftgrösse kann die Seitenzahl auf Ihrem Lesegerät variieren.
- Dateiformat: ePub
- Grösse: 35 MB
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