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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications (PDF)

(Sprache: Englisch)
 
 
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High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT...

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Bestellnummer: 139226461

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