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Vibrational Properties of Defective Oxides and 2D Nanolattices

Insights from First-Principles Simulations (Sprache: Englisch)
 
 
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Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future.

This thesis is devoted to the...
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