MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
(Sprache: Englisch)
This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.
Voraussichtlich lieferbar in 3 Tag(en)
versandkostenfrei
Buch (Kartoniert)
Fr. 134.90
inkl. MwSt.
- Kreditkarte, Paypal, Rechnungskauf
- 30 Tage Widerrufsrecht
Produktdetails
Produktinformationen zu „MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch “
This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.
Klappentext zu „MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch “
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Inhaltsverzeichnis zu „MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch “
Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.Autoren-Porträt von Viranjay M. Srivastava, Ghanshyam Singh
Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.
Bibliographische Angaben
- Autoren: Viranjay M. Srivastava , Ghanshyam Singh
- 2016, Softcover reprint of the original 1st ed. 2014, XV, 199 Seiten, 45 farbige Abbildungen, Masse: 15,5 x 23,6 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 3319345354
- ISBN-13: 9783319345352
Sprache:
Englisch
Kommentar zu "MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch"
0 Gebrauchte Artikel zu „MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch“
Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
---|
Schreiben Sie einen Kommentar zu "MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch".
Kommentar verfassen