FinFETs and Other Multi-Gate Transistors
(Sprache: Englisch)
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to...
Voraussichtlich lieferbar in 3 Tag(en)
versandkostenfrei
Buch (Kartoniert)
Fr. 236.00
inkl. MwSt.
- Kreditkarte, Paypal, Rechnungskauf
- 30 Tage Widerrufsrecht
Produktdetails
Produktinformationen zu „FinFETs and Other Multi-Gate Transistors “
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Klappentext zu „FinFETs and Other Multi-Gate Transistors “
FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits. The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.
FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.
Inhaltsverzeichnis zu „FinFETs and Other Multi-Gate Transistors “
The SOI MOSFET: from Single Gate to Multigate.- Multigate MOSFET Technology.- BSIM-CMG: A Compact Model for Multi-Gate Transistors.- Physics of the Multigate MOS System.- Mobility in Multigate MOSFETs.- Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs.- Multi-Gate MOSFET Circuit Design.
Bibliographische Angaben
- 2010, XV, 340 Seiten, Masse: 15,5 x 23,5 cm, Kartoniert (TB), Englisch
- Herausgegeben: J.-P. Colinge
- Verlag: Springer, Berlin
- ISBN-10: 1441944095
- ISBN-13: 9781441944092
Sprache:
Englisch
Kommentar zu "FinFETs and Other Multi-Gate Transistors"
0 Gebrauchte Artikel zu „FinFETs and Other Multi-Gate Transistors“
| Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
|---|
Schreiben Sie einen Kommentar zu "FinFETs and Other Multi-Gate Transistors".
Kommentar verfassen