Thermodynamic Basis of Crystal Growth
Phase P-T-X Equilibrium and Non-Stoichiometry
(Sprache: Englisch)
This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. The technique is based on the high-precision experimental determination of the boundaries of the single-phase volume of...
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Klappentext zu „Thermodynamic Basis of Crystal Growth “
This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. The technique is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. Alongside test results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, V-VI semiconductors) are also discussed.
Inhaltsverzeichnis zu „Thermodynamic Basis of Crystal Growth “
1. Thermodynamic Fundamentals2. Experimental Methods of Investigation of P-T-X Phase Equilibrium
3. Experimental Data on P-T-X Phase Diagrams and Non-Stoichiometry
4. Conclusion
Bibliographische Angaben
- Autor: Jacob Greenberg
- 2001, 2002, 251 Seiten, 126 Abbildungen, Masse: 16,4 x 24,6 cm, Gebunden, Englisch
- Verlag: Springer
- ISBN-10: 3540412468
- ISBN-13: 9783540412465
- Erscheinungsdatum: 20.11.2001
Sprache:
Englisch
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