Semiconductor Device Physics and Design
(Sprache: Englisch)
Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges.
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Produktinformationen zu „Semiconductor Device Physics and Design “
Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges.
Klappentext zu „Semiconductor Device Physics and Design “
Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.
Inhaltsverzeichnis zu „Semiconductor Device Physics and Design “
Acknowledgements. Preface. Introduction. 1 Structural Properties of Semiconductors. 1.1 INTRODUCTION. 1.2 CRYSTAL STRUCTURE. 1.3 LATTICE MISMATCHED STRUCTURES. 1.4 STRAINED EPITAXY:STRAIN TENSOR. 1.5 TECHNOLOGY CHALLENGES. 1.6 PROBLEMS. 1.7 FURTHER READING. 2 Electronic levels in semiconductors. 2.1 INTRODUCTION. 2.2 PARTICLES IN AN ATTRACTIVE POTENTIAL: BOUND STATES. 2.3 ELECTRONS IN CRYSTALLINE SOLIDS. 2.4 OCCUPATION OF STATES: DISTRIBUTION FUNCTION. 2.5 METALS AND INSULATORS. 2.6 BANDSTRUCTURE OF SOME IMPORTANT SEMICONDUCTORS. 2.7 MOBILE CARRIER. 2.8 DOPING OF SEMICONDUCTORS. 2.9 DOPING IN POLAR MATERIALS. 2.10 TAILORING ELECTRONIC PROPERTIES. 2.11 STRAINED HETEROSTRUCTURES. 2.12 DEFECT STATES IN SOLIDS. 2.13 TECHNOLOGY ISSUES. 2.14 PROBLEMS. 2.15 FURTHER READING. 3 Charge transport in materials. 3.1 INTRODUCTION. 3.2 CHARGE TRANSPORT:AN OVERVIEW. 3.3 TRANSPORT AND SCATTERING. 3.4 TRANSPORT UNDER AN ELECTRIC FIELD. 3.5 SOME IMPORTANT ISSUES IN TRANSPORT. 3.6 CARRIER TRANSPORT BY DIFFUSION. 3.7 CHARGE INJECTION AND QUASI-FERMI LEVELS. 3.8 CARRIER GENERATION AND RECOMBINATION. 3.9 CURRENT CONTINUITY(The law of conservation of electrons and holes separately). 3.10 PROBLEMS. 3.11 FURTHER READING. 4 Junctions in Semiconductors: P-N Diodes. 4.1 INTRODUCTION. 4.2 P-N JUNCTION IN EQUILIBRIUM. 4.3 P-N DIODE UNDER BIAS. 4.4 REAL DIODES: CONSEQUENCES OF DEFECTS AND CARRIER GENERATION. 4.5 REVERSE BIAS CHARACTERISITCS. 4.6 HIGH-VOLTAGE EFFECTS IN DIODES. 4.7 AVALANCHE BREAKDOWN IN A P-N JUNCTION. 4.8 DIODE APPLICATIONS:AN OVERVIEW. 4.9 LIGHT EMITTING DIODE (LED). 4.10 PROBLEMS. 4.11 DESIGN PROBLEMS. 4.12 FURTHER READING. 5 Semiconductor Junctions. 5.1 INTRODUCTION. 5.2 METAL INTERCONNECTS. 5.3 METAL SEMICONDUCTOR JUNCTION: SCHOTTKY BARRIER. 5.4 METAL SEMICONDUCTOR JUNCTIONS FOR OHMIC CONTACTS. 5.5 INSULATOR-SEMICONDUCTOR JUNCTIONS. 5.6 SEMICONDUCTOR HETEROJUNCTIONS. 5.7 PROBLEMS. 5.8 FURTHER READING. 6 Bipolar Junction Transistors. 6.1 INTRODUCTION. 6.2 BIPOLAR TRANSISTOR:A
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CONCEPTUAL PICTURE. 6.3 STATIC CHARACTERISTICS: CURRENT-VOLTAGE RELATION. 6.4 DEVICE DESIGN AND DEVICE PERFORMANCE PARAMETERS. 6.5 BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING AND HBTs. 6.6 SECONDARY EFFECTS IN REAL DEVICES. 6.7 PROBLEMS. 6.8 DESIGN PROBLEMS. 6.9 FURTHER READING. 7 Temporal Response Of Diodes and Bipolar Transistors. 7.1 INTRODUCTION. 7.2 MODULATION AND SWITCHING OF A P-N DIODE: AC RESPONSE. 7.3 TEMPORAL RESPONSE OF A SCHOTTKY DIODE. 7.4 BIPOLAR JUNCTION TRANSISTORS: A CHARGE-CONTROL ANALYSIS. 7.5 HIGH-FREQUENCY BEHAVIOR OF A BJT. 7.6 BIPOLAR TRANSISTORS: A TECHNOLOGY ROADMAP. 7.7 PROBLEMS. 7.8 DESIGN PROBLEMS. 8 Field Effect Transistors. 8.1 INTRODUCTION. 8.2 JFET AND MESFET: CHARGE CONTROL. 8.3 CURRENT-VOLTAGE CHARACTERISTICS. 8.4 HFETs: INTRODUCTION. 8.5 CHARGE CONTROL MODEL FOR THE MODFET. 8.6 POLAR MATERIALS AND STRUCTURES. 8.7 DESIGN ISSUES IN HFETS. 8.8 SMALL AND LARGE SIGNAL ISSUES AND FIGURES OF MERIT. 8.9 IMPLICATIONS ON DEVICE TECHNOLOGY AND CIRCUITS. 8.10 PROBLEMS. 8.11 DESIGN PROBLEMS. 8.12 FURTHER READING. 9 Field Effect Transistors: MOSFET. 9.1 INTRODUCTION. 9.2 MOSFET: DEVICES AND IMPACT. 9.3 METAL-OXIDE-SEMICONDUCTOR CAPACITOR. 9.4 CAPACITANCE-VOLTAGE CHARACTERISTICS OF THE MOS STRUCTURE. 9.5 MOSFET OPERATION. 9.6 IMPORTANT ISSUES AND FUTURE CHALLENGES IN REAL MOSFETS. 9.7 SUMMARY. 9.8 PROBLEMS. 9.9 DESIGN PROBLEMS. 9.10 FURTHER READING. 10 Coherent Transport and Mesoscopic Devices. 10.1 INTRODUCTION. 10.2 ZENER-BLOCH OSCILLATIONS. 10.3 RESONANT TUNNELING. 10.4 QUANTUM INTERFERENCE EFFECTS. 10.5 MESOSCOPIC STRUCTURES. 10.6 MAGNETIC SEMICONDUCTORS AND SPINTRONICS. 10.7 PROBLEMS. 10.8 FURTHER READING. A LIST OF SYMBOLS. B BOLTZMANN TRANSPORT THEORY. B.1 BOLTZMANN TRANSPORT EQUATION. B.2 AVERAGING PROCEDURES. C DENSITY OF STATES. D IMPORTANT PROPERTIES OF SEMICONDUCTORS.
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Bibliographische Angaben
- Autoren: Umesh Mishra , Jasprit Singh
- 2007, 559 Seiten, Masse: 16 x 24,1 cm, Gebunden, Englisch
- Verlag: Springer Netherlands
- ISBN-10: 1402064802
- ISBN-13: 9781402064807
- Erscheinungsdatum: 28.11.2007
Sprache:
Englisch
Rezension zu „Semiconductor Device Physics and Design “
From the reviews:"This book is a course very well written and comprehensive dedicated to semiconductors. The authors have detailed fundamental concepts from basic physics until research and development topics. ... Important semiconductors properties are summarized in useful tables at the end of the book. To help students to be familiar with the theory, examples are detailed in the text and at the end of each chapter exercises are proposed." (Grégory Guisbiers, Physicalia, Vol. 30 (2), 2008)"This is a classical textbook about the physics of semiconductor devices. It is intended for electrical engineers, but is also useful for young physicists. The book is very clear and covers all the main knowledge necessary for a graduate student in the area of semiconductors ... . It contains many helpful figures, examples and problem sets. This book is also a good guide for teachers. In addition, advanced researchers could use it because the needed information is easy to find and extremely well synthesized." (Mircea Dragoman, Optics and Photonics News, September, 2008)
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