High Dielectric Constant Materials

The Economic Implications of Moore's Law
- Brief Notes on the History of Gate Dielectrics in MOS Devices
- SiO2-Base MOSFETS: Film Growth and Si-SiO2-Interface Properties
- Oxide Reliability Issues
- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride
- Optimal Scaling Methodologies and Transistor Performance Utilizing SiO2/Silicon Oxynitride
- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-K Gate Dielectric Implementation
- Alternative Dielectrics for Silicon-Based Transistors: Selection via Multiple Criteria
- Materials Issues for High-K Gate Dielectric Selection and Integration
- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks
- Electronic Structure of Alternative High-K Dielectrics
- Physicochemical Properties of Selected 4d, 5d, and Rare-Earth Metals in Silicon
- High-K Gate Dielectric Deposition Technologies
- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices
- CMOS IC Fabrication Issues for High-K Gate Dielectric and Alternate Electrode Materials
- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films
- Electrical Measurement Issues for Alternative Gate Stack Systems
- High-K Gate Dielectric Materials Integrated Circuit Device Design Issues
- High-K Crystalline Gate Dielectrics: A Research Perspective
- High-K Crystalline Gate Dielectrics: An IC Manufacturer's Perspective
- Advanced MOS-Devices.