Fundamentals of Power Semiconductor Devices
(Sprache: Englisch)
This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
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Produktinformationen zu „Fundamentals of Power Semiconductor Devices “
This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Klappentext zu „Fundamentals of Power Semiconductor Devices “
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Inhaltsverzeichnis zu „Fundamentals of Power Semiconductor Devices “
- Junction Barrier Controlled Schottky Rectifier- Structure and Basic Operation
- Silicon Forward Conduction Model
- Silicon Carbide Forward Conduction Model
- Silicon Reverse Leakage Model
- Silicon Carbide Reverse Leakage Model
- Trade-Off Curves.-MOS Barrier Controlled Schottky Rectifier
- Structure and Basic Operation
- Silicon Forward Conduction Model
- Silicon Reverse Leakage Model
- Trade-Off Curves
- Trench Schottky Barrier Controlled Schottky Rectifier
- Structure and Basic Operation
- Silicon Forward Conduction Model
- Silicon Carbide Forward Conduction Model
- Silicon Reverse Leakage Model
- Silicon Carbide Reverse Leakage Model
- Trade-Off Curves
- Merged P-i-N Schottky Rectifier
- Structure and Basic Operation
- Forward Conduction Model
- Reverse Leakage Model
- Stored Charge Model
- Reverse Recovery Model
Autoren-Porträt von B. J. Baliga
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.Bibliographische Angaben
- Autor: B. J. Baliga
- 2008, XXIII, 1069 Seiten, Masse: 16,4 x 24,2 cm, Gebunden, Englisch
- Verlag: Springer
- ISBN-10: 0387473130
- ISBN-13: 9780387473130
- Erscheinungsdatum: 27.10.2008
Sprache:
Englisch
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